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S29GL512T10FAI013

S29GL512T10FAI013

S29GL512T10FAI013

Cypress Semiconductor Corp

GL-T Memory IC GL-T Series 13mm mm

SOT-23

S29GL512T10FAI013 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Series GL-T
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
JESD-30 Code R-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 512Mb 64M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 100ns
Memory Format FLASH
Memory Interface Parallel
Organization 32MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 536870912 bit
Programming Voltage 2.7V
Alternate Memory Width 8
Height Seated (Max) 1.4mm
Length 13mm
Width 11mm
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,600 $5.67000 $5.67
S29GL512T10FAI013 Product Details

S29GL512T10FAI013 Overview


A Non-Volatile-type memory can be classified as the memory type of this device. It is available in a case with a Tape & Reel (TR) shape. The case is embedded in 64-LBGA. 512Mb 64M x 8 is the chip's memory size. This device utilizes a FLASH format memory which is of mainstream design. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. There is a recommended mounting type of Surface Mount for it. On the chip, there are 64 terminations. In total, this part supports 1 functions. A voltage of 3V is required for the operation of this memory device. This part is part of the GL-T series of memory devices, which play a key role in its target applications. A programming voltage of 2.7V is needed to alter the state of certain nonvolatile memory arrays.

S29GL512T10FAI013 Features


Package / Case: 64-LBGA

S29GL512T10FAI013 Applications


There are a lot of Cypress Semiconductor Corp S29GL512T10FAI013 Memory applications.

  • servers
  • multimedia computers
  • workstations,
  • networking
  • eDRAM
  • supercomputers
  • telecommunications
  • nonvolatile BIOS memory
  • data buffer
  • mainframes

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