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S29GL512T11DHIV23

S29GL512T11DHIV23

S29GL512T11DHIV23

Cypress Semiconductor Corp

GL-T Memory IC GL-T Series 9mm mm

SOT-23

S29GL512T11DHIV23 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Published 2017
Series GL-T
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.65V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
JESD-30 Code S-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 512Mb 64M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 110ns
Memory Format FLASH
Memory Interface Parallel
Organization 32MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 536870912 bit
Programming Voltage 2.7V
Alternate Memory Width 8
Height Seated (Max) 1.4mm
Length 9mm
Width 9mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,200 $5.48100 $10.962
S29GL512T11DHIV23 Product Details

S29GL512T11DHIV23 Overview


There is a Non-Volatile memory type associated with this device. It is supplied votage within Tape & Reel (TR). The 64-LBGA case contains it. On the chip, there is an 512Mb 64M x 8 memory, which is the size of the chip's memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. The device is capable of handling a supply voltage of 1.65V~3.6V volts. Its recommended mounting type is Surface Mount. 64 terminations are planted on the chip. It supports up to 1 functions for comprehensive operation. This ic memory chip is designed to be supplied with 3V. This part is part of the GL-T series of memory devices, which play a key role in its target applications. A programming voltage of 2.7V is required to change a nonvolatile memory array's state.

S29GL512T11DHIV23 Features


Package / Case: 64-LBGA

S29GL512T11DHIV23 Applications


There are a lot of Cypress Semiconductor Corp S29GL512T11DHIV23 Memory applications.

  • nonvolatile BIOS memory
  • personal computers
  • multimedia computers
  • hard disk drive (HDD)
  • eSRAM
  • servers
  • eDRAM
  • cell phones
  • Camcorders
  • telecommunications

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