S29GL512T11FAIV10

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Manufacturer part number:S29GL512T11FAIV10

Manufacturer:Cypress Semiconductor Corp

Description:GL-T Memory IC GL-T Series 13mm mm

Case Package:SOT-23

Datasheet:S29GL512T11FAIV10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mounting Type	Surface Mount
Package / Case	64-LBGA
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tray
Series	GL-T
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	64
HTS Code	8542.32.00.51
Technology	FLASH - NOR
Voltage - Supply	1.65V~3.6V
Terminal Position	BOTTOM
Number of Functions	1
Supply Voltage	3V
Terminal Pitch	1mm
JESD-30 Code	R-PBGA-B64
Supply Voltage-Max (Vsup)	3.6V
Supply Voltage-Min (Vsup)	2.7V
Memory Size	512Mb 64M x 8
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Access Time	110ns
Memory Format	FLASH
Memory Interface	Parallel
Organization	32MX16
Memory Width	16
Write Cycle Time - Word, Page	60ns
Memory Density	536870912 bit
Programming Voltage	2.7V
Alternate Memory Width	8
Height Seated (Max)	1.4mm
Length	13mm
Width	11mm
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
180	$6.37139	$1146.8502

S29GL512T11FAIV10 Overview

In this case, the memory type of the device can be classified as Non-Volatile. Case Tray is available. The 64-LBGA case contains it. 512Mb 64M x 8 is the chip's memory size. The device uses a mainstream FLASH-format memory. A wide operating temperature range makes this device ideal for a variety of demanding applications. It is capable of handling a voltage supply of 1.65V~3.6V. There is a recommended mounting type of Surface Mount for it. On the chip, there are 64 terminations. The comprehensive working procedure of this part involves 1 functions. Memory devices such as this one are designed to be powered by 3V and should be used as such. Among the GL-T series of memory devices, this part is essential for its applications. It is necessary to apply 2.7V programming voltage to certain nonvolatile memory arrays in order to change their state.