S29GL512T12TFN020

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Manufacturer part number:S29GL512T12TFN020

Manufacturer:Cypress Semiconductor Corp

Description:GL-T Memory IC GL-T Series 18.4mm mm

Case Package:SOT-23

Datasheet:S29GL512T12TFN020 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mounting Type	Surface Mount
Package / Case	56-TFSOP (0.724, 18.40mm Width)
Surface Mount	YES
Operating Temperature	-40°C~125°C TA
Packaging	Tray
Series	GL-T
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	56
HTS Code	8542.32.00.51
Technology	FLASH - NOR
Voltage - Supply	2.7V~3.6V
Terminal Position	DUAL
Number of Functions	1
Supply Voltage	3V
Terminal Pitch	0.5mm
JESD-30 Code	R-PDSO-G56
Supply Voltage-Max (Vsup)	3.6V
Supply Voltage-Min (Vsup)	2.7V
Memory Size	512Mb 64M x 8
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Access Time	120ns
Memory Format	FLASH
Memory Interface	Parallel
Organization	32MX16
Memory Width	16
Write Cycle Time - Word, Page	60ns
Memory Density	536870912 bit
Programming Voltage	2.7V
Alternate Memory Width	8
Height Seated (Max)	1.2mm
Length	18.4mm
Width	14mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
91	$8.78000	$798.98

S29GL512T12TFN020 Overview

There is a Non-Volatile memory type associated with this device. In addition, memory ics is available in a Tray case as well. Embedded in the 56-TFSOP (0.724, 18.40mm Width) case, memory ics is a single file. It is estimated that the memory size on the chip is 512Mb 64M x 8. Memory data is stored in FLASH-format, which is common in mainstream devices. With an extended designed operating temperature of -40°C~125°C TA, this device is capable of lots of demanding applications. It is capable of handling a voltage supply of 2.7V~3.6V. Its recommended mounting type is Surface Mount. There are 56 terminations on the chip. For a comprehensive working procedure, this part supports as many as 1 functions. A voltage of 3V is required for the operation of this memory device. This part is part of the GL-T series of memory devices, which play a key role in its target applications. The programming voltage required for certain nonvolatile memory arrays is 2.7V.