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S29PL032J55BFI120E

S29PL032J55BFI120E

S29PL032J55BFI120E

Cypress Semiconductor Corp

Memory IC 8.15mm mm

SOT-23

S29PL032J55BFI120E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Surface Mount YES
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 0.8mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B48
Operating Temperature (Max) 85°C
Operating Temperature (Min) -40°C
Supply Voltage-Max (Vsup) 3.6V
Temperature Grade INDUSTRIAL
Supply Voltage-Min (Vsup) 2.7V
Operating Mode ASYNCHRONOUS
Organization 2MX16
Memory Width 16
Memory Density 33554432 bit
Access Time (Max) 55 ns
Parallel/Serial PARALLEL
Memory IC Type FLASH
Programming Voltage 3V
Alternate Memory Width 1
Length 8.15mm
Height Seated (Max) 1mm
Width 6.15mm
RoHS Status ROHS3 Compliant
S29PL032J55BFI120E Product Details

S29PL032J55BFI120E Overview


A total of 48 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3V will be necessary. A programming voltage of 3V is required to change a nonvolatile memory array's state. This chip contains a FLASH type of memory IC. Use it only at temperatures above 85°C. A temperature of -40°C is required for the unit to operate, otherwise, it will not operate.

S29PL032J55BFI120E Features




S29PL032J55BFI120E Applications


There are a lot of Cypress Semiconductor Corp
S29PL032J55BFI120E Memory applications.


  • supercomputers
  • telecommunications
  • workstations,
  • DVD disk buffer
  • data buffer
  • nonvolatile BIOS memory
  • Camcorders
  • embedded logic
  • eDRAM
  • graphics card

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