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S29VS064RABBHW013

S29VS064RABBHW013

S29VS064RABBHW013

Cypress Semiconductor Corp

1.8V V VS-R Memory IC VS-R Series 7.5mm mm

SOT-23

S29VS064RABBHW013 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Package / Case 44-VFBGA
Surface Mount YES
Operating Temperature -25°C~85°C TA
Packaging Tape & Reel (TR)
Published 2015
Series VS-R
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 44
ECCN Code 3A991.B.1.A
Additional Feature BOTTOM BOOT BLOCK
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.7V~1.95V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.5mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B44
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 1.95V
Power Supplies 1.8V
Supply Voltage-Min (Vsup) 1.7V
Memory Size 64Mb 4M x 16
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 108MHz
Supply Current-Max 0.076mA
Access Time 80ns
Memory Format FLASH
Memory Interface Parallel
Organization 4MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Standby Current-Max 0.00007A
Memory Density 67108864 bit
Programming Voltage 1.8V
Data Polling YES
Toggle Bit YES
Command User Interface YES
Number of Sectors/Size 4127
Sector Size 8K32K
Ready/Busy YES
Boot Block BOTTOM
Common Flash Interface YES
Height Seated (Max) 1mm
Length 7.5mm
Width 5mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,500 $3.16386 $9.49158
S29VS064RABBHW013 Product Details

S29VS064RABBHW013 Overview


There is a memory type Non-Volatile for this type of device. It is available in a case with a Tape & Reel (TR) shape. The file is embedded in a 44-VFBGA case. 64Mb 4M x 16 is the chip's memory size. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. The device's extended operating temperature range of -25°C~85°C TA makes it ideal for many demanding applications. A voltage of 1.7V~1.95V is possible to be applied to the supply. There is a recommended mounting type of Surface Mount for it. It is planted on the chip with 44 terminations. The comprehensive working procedure is supported by 1 functions in this part. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. A clock frequency rotation within 108MHz is used for the ic memory chip to rotate data. Despite all its benefits, this memory chip also offers BOTTOM BOOT BLOCK for improved system performance. Power supplies for this memory chip are merely 1.8V . This part plays an important role in applications that target the VS-R series of memory devices. In order to operate your device, you will need to provide a maximum supply current of 0.076mA. To alter the state of certain nonvolatile memory arrays, 1.8V programming voltage is required. It is important to keep in mind that this memory has 4127 specific sized divisions in total.

S29VS064RABBHW013 Features


Package / Case: 44-VFBGA
Additional Feature:BOTTOM BOOT BLOCK

S29VS064RABBHW013 Applications


There are a lot of Cypress Semiconductor Corp S29VS064RABBHW013 Memory applications.

  • hard disk drive (HDD)
  • eSRAM
  • workstations,
  • telecommunications
  • multimedia computers
  • servers
  • Camcorders
  • printers
  • nonvolatile BIOS memory
  • supercomputers

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