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S29WS064RABBHW010

S29WS064RABBHW010

S29WS064RABBHW010

Cypress Semiconductor Corp

1.8V V WS-R Memory IC WS-R Series 11.6mm mm

SOT-23

S29WS064RABBHW010 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 84-VFBGA
Surface Mount YES
Number of Pins 84
Operating Temperature -25°C~85°C TA
Packaging Tray
Series WS-R
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 84
ECCN Code 3A991.B.1.A
Additional Feature BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.7V~1.95V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.8mm
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 1.95V
Power Supplies 1.8V
Supply Voltage-Min (Vsup) 1.7V
Memory Size 64Mb 4M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Clock Frequency 108MHz
Supply Current-Max 0.076mA
Access Time 80ns
Memory Format FLASH
Memory Interface Parallel
Organization 4MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Standby Current-Max 0.00007A
Memory Density 67108864 bit
Programming Voltage 1.8V
Data Polling YES
Toggle Bit YES
Command User Interface YES
Number of Sectors/Size 4127
Sector Size 8K32K
Ready/Busy YES
Boot Block BOTTOM
Common Flash Interface YES
Height Seated (Max) 1mm
Length 11.6mm
Width 8mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.80000 $7.8
500 $7.722 $3861
1000 $7.644 $7644
1500 $7.566 $11349
2000 $7.488 $14976
2500 $7.41 $18525
S29WS064RABBHW010 Product Details

S29WS064RABBHW010 Overview


In this case, the memory type of the device can be classified as Non-Volatile. You can get memory ics in a Tray case. In the case of 84-VFBGA, it is embedded within the case. On the chip, there is an 64Mb 4M x 16 memory, which is the size of the chip's memory. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V. It is recommended that the mounting type be Surface Mount. There are 84 terminations on the chip. This part supports as many as 1 functions for the comprehensive working procedure. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. It is important to note that the memory has a clock frequency rotation within the range of 108MHz. The memory device is enclosed in a package with an 84-pin connector. Although it has all the merits this chip has, it is also equipped with BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE to give a performance boost to the system. The power supply needed for this memory chip is only 1.8V . This part is part of the WS-R series of memory devices, which play a key role in its target applications. A maximum supply current of 0.076mA can be used to operate this device. Nonvolatile memory arrays require 1.8V programming voltage to change their state. This ic memory chip has 4127 specifically sized divisions in total.

S29WS064RABBHW010 Features


Package / Case: 84-VFBGA
84 Pins
Additional Feature:BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

S29WS064RABBHW010 Applications


There are a lot of Cypress Semiconductor Corp S29WS064RABBHW010 Memory applications.

  • embedded logic
  • mainframes
  • cell phones
  • eSRAM
  • multimedia computers
  • workstations,
  • hard disk drive (HDD)
  • servers
  • nonvolatile BIOS memory
  • supercomputers

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