BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
HTS Code
8542.32.00.51
Technology
FLASH - NOR
Voltage - Supply
1.7V~1.95V
Terminal Position
BOTTOM
Number of Functions
1
Supply Voltage
1.8V
Terminal Pitch
0.8mm
Qualification Status
Not Qualified
Supply Voltage-Max (Vsup)
1.95V
Power Supplies
1.8V
Supply Voltage-Min (Vsup)
1.7V
Memory Size
64Mb 4M x 16
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Clock Frequency
108MHz
Supply Current-Max
0.076mA
Access Time
80ns
Memory Format
FLASH
Memory Interface
Parallel
Organization
4MX16
Memory Width
16
Write Cycle Time - Word, Page
60ns
Standby Current-Max
0.00007A
Memory Density
67108864 bit
Programming Voltage
1.8V
Data Polling
YES
Toggle Bit
YES
Command User Interface
YES
Number of Sectors/Size
4127
Sector Size
8K32K
Ready/Busy
YES
Boot Block
BOTTOM
Common Flash Interface
YES
Height Seated (Max)
1mm
Length
11.6mm
Width
8mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.80000
$7.8
500
$7.722
$3861
1000
$7.644
$7644
1500
$7.566
$11349
2000
$7.488
$14976
2500
$7.41
$18525
S29WS064RABBHW010 Product Details
S29WS064RABBHW010 Overview
In this case, the memory type of the device can be classified as Non-Volatile. You can get memory ics in a Tray case. In the case of 84-VFBGA, it is embedded within the case. On the chip, there is an 64Mb 4M x 16 memory, which is the size of the chip's memory. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V. It is recommended that the mounting type be Surface Mount. There are 84 terminations on the chip. This part supports as many as 1 functions for the comprehensive working procedure. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. It is important to note that the memory has a clock frequency rotation within the range of 108MHz. The memory device is enclosed in a package with an 84-pin connector. Although it has all the merits this chip has, it is also equipped with BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE to give a performance boost to the system. The power supply needed for this memory chip is only 1.8V . This part is part of the WS-R series of memory devices, which play a key role in its target applications. A maximum supply current of 0.076mA can be used to operate this device. Nonvolatile memory arrays require 1.8V programming voltage to change their state. This ic memory chip has 4127 specifically sized divisions in total.
S29WS064RABBHW010 Features
Package / Case: 84-VFBGA 84 Pins Additional Feature:BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
S29WS064RABBHW010 Applications
There are a lot of Cypress Semiconductor Corp S29WS064RABBHW010 Memory applications.