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S29WS256RAABHW000

S29WS256RAABHW000

S29WS256RAABHW000

Cypress Semiconductor Corp

WS-R Memory IC WS-R Series 11.6mm mm

SOT-23

S29WS256RAABHW000 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 84-VFBGA
Surface Mount YES
Operating Temperature -25°C~85°C TA
Packaging Tray
Series WS-R
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 84
Additional Feature SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Technology FLASH - NOR
Voltage - Supply 1.7V~1.95V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.8mm
JESD-30 Code R-PBGA-B84
Supply Voltage-Max (Vsup) 1.95V
Supply Voltage-Min (Vsup) 1.7V
Memory Size 256Mb 16M x 16
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 104MHz
Access Time 80ns
Memory Format FLASH
Memory Interface Parallel
Organization 32MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 536870912 bit
Programming Voltage 1.8V
Boot Block BOTTOM/TOP
Height Seated (Max) 1mm
Length 11.6mm
Width 8mm
RoHS Status ROHS3 Compliant
S29WS256RAABHW000 Product Details

S29WS256RAABHW000 Overview


A Non-Volatile-type memory can be classified as the memory type of this device. Case Tray is available. An embedded 84-VFBGA case surrounds memory ics. This chip has an 256Mb 16M x 16 size of memory on it, so a lot of data can be stored on it. FLASH-format memory is used in this device, which is a mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A supply voltage of 1.7V~1.95V can be applied to it. As far as the mounting type is concerned, Surface Mount is recommended. The chip is terminated with 84 terminations. In total, 1 functions are supported by this part. This ic memory chip is designed to be supplied with 1.8V. During the rotation of the clock, the ic memory chip is set as 104MHz. This chip features all the merits of a conventional chip, but it also features SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE to improve system performance. Its target applications rely heavily on the WS-R series memory devices. To alter the state of certain nonvolatile memory arrays, 1.8V programming voltage is required.

S29WS256RAABHW000 Features


Package / Case: 84-VFBGA
Additional Feature:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

S29WS256RAABHW000 Applications


There are a lot of Cypress Semiconductor Corp S29WS256RAABHW000 Memory applications.

  • personal computers
  • servers
  • eSRAM
  • hard disk drive (HDD)
  • Cache memory
  • supercomputers
  • personal digital assistants
  • multimedia computers
  • main computer memory
  • networking

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