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S34ML01G100TFV000

S34ML01G100TFV000

S34ML01G100TFV000

Cypress Semiconductor Corp

ML-1 Memory IC ML-1 Series 18.4mm mm

SOT-23

S34ML01G100TFV000 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724, 18.40mm Width)
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tray
Published 2017
Series ML-1
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
Terminal Finish Matte Tin (Sn)
HTS Code 8542.32.00.51
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.5mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G48
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 1Gb 128M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Memory Format FLASH
Memory Interface Parallel
Organization 128MX8
Memory Width 8
Write Cycle Time - Word, Page 25ns
Memory Density 1073741824 bit
Programming Voltage 3V
Height Seated (Max) 1.2mm
Length 18.4mm
Width 12mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
96 $5.66042 $543.40032
S34ML01G100TFV000 Product Details

S34ML01G100TFV000 Overview


As far as memory types are concerned, Non-Volatile is considered to be its memory type. It comes in a Tray. It is available in 48-TFSOP (0.724, 18.40mm Width) case. 1Gb 128M x 8 is the chip's memory size. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. With an extended designed operating temperature of -40°C~105°C TA, this device is capable of lots of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V volts. The recommended mounting type for this device is Surface Mount. The chip contains 48 terminations. This part supports as many as 1 functions for the comprehensive working procedure. A voltage of 3.3V is required for the operation of this memory device. Its target applications rely heavily on the ML-1 series memory devices. A programming voltage of 3V is required to change a nonvolatile memory array's state.

S34ML01G100TFV000 Features


Package / Case: 48-TFSOP (0.724, 18.40mm Width)

S34ML01G100TFV000 Applications


There are a lot of Cypress Semiconductor Corp S34ML01G100TFV000 Memory applications.

  • cell phones
  • eSRAM
  • servers
  • nonvolatile BIOS memory
  • networking
  • graphics card
  • data buffer
  • main computer memory
  • hard disk drive (HDD)
  • printers

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