Automotive, AEC-Q100, ML-1 Memory IC Automotive, AEC-Q100, ML-1 Series 11mm mm
SOT-23
S34ML08G101BHB003 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
63-VFBGA
Surface Mount
YES
Operating Temperature
-40°C~105°C TA
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q100, ML-1
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
63
HTS Code
8542.32.00.71
Technology
FLASH - NAND
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.8mm
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PBGA-B63
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
8Gb 1G x 8
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Memory Interface
Parallel
Organization
1GX8
Memory Width
8
Write Cycle Time - Word, Page
25ns
Memory Density
8589934592 bit
Programming Voltage
3V
Height Seated (Max)
1mm
Length
11mm
Width
9mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,300
$14.74767
$29.49534
S34ML08G101BHB003 Product Details
S34ML08G101BHB003 Overview
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The case is embedded in 63-VFBGA. The chip has an 8Gb 1G x 8 memory. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide temperature range of -40°C~105°C TA, this device is well suited to a wide range of applications that require high performance. A voltage of 2.7V~3.6V is possible to be applied to the supply. The recommended mounting type for this device is Surface Mount. It is planted on the chip with 63 terminations. The comprehensive working procedure is supported by 1 functions in this part. Memory devices such as this one are designed to be powered by 3V and should be used as such. Among the Automotive, AEC-Q100, ML-1 series of memory devices, this part is essential for its applications. A programming voltage of 3V is required to alter the state of certain nonvolatile memory arrays.
S34ML08G101BHB003 Features
Package / Case: 63-VFBGA
S34ML08G101BHB003 Applications
There are a lot of Cypress Semiconductor Corp S34ML08G101BHB003 Memory applications.