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S34ML08G101BHB003

S34ML08G101BHB003

S34ML08G101BHB003

Cypress Semiconductor Corp

Automotive, AEC-Q100, ML-1 Memory IC Automotive, AEC-Q100, ML-1 Series 11mm mm

SOT-23

S34ML08G101BHB003 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case 63-VFBGA
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q100, ML-1
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 63
HTS Code 8542.32.00.71
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 0.8mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B63
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 8Gb 1G x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Memory Format FLASH
Memory Interface Parallel
Organization 1GX8
Memory Width 8
Write Cycle Time - Word, Page 25ns
Memory Density 8589934592 bit
Programming Voltage 3V
Height Seated (Max) 1mm
Length 11mm
Width 9mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,300 $14.74767 $29.49534
S34ML08G101BHB003 Product Details

S34ML08G101BHB003 Overview


Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The case is embedded in 63-VFBGA. The chip has an 8Gb 1G x 8 memory. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide temperature range of -40°C~105°C TA, this device is well suited to a wide range of applications that require high performance. A voltage of 2.7V~3.6V is possible to be applied to the supply. The recommended mounting type for this device is Surface Mount. It is planted on the chip with 63 terminations. The comprehensive working procedure is supported by 1 functions in this part. Memory devices such as this one are designed to be powered by 3V and should be used as such. Among the Automotive, AEC-Q100, ML-1 series of memory devices, this part is essential for its applications. A programming voltage of 3V is required to alter the state of certain nonvolatile memory arrays.

S34ML08G101BHB003 Features


Package / Case: 63-VFBGA

S34ML08G101BHB003 Applications


There are a lot of Cypress Semiconductor Corp S34ML08G101BHB003 Memory applications.

  • eSRAM
  • supercomputers
  • data buffer
  • personal digital assistants
  • cell phones
  • telecommunications
  • hard disk drive (HDD)
  • Cache memory
  • networks
  • DVD disk buffer

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