Automotive, AEC-Q100, ML-2 Memory IC Automotive, AEC-Q100, ML-2 Series
SOT-23
S34ML08G201TFB003 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Surface Mount
YES
Operating Temperature
-40°C~105°C TA
Packaging
Tape & Reel (TR)
Published
2016
Series
Automotive, AEC-Q100, ML-2
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
Terminal Finish
Matte Tin (Sn)
HTS Code
8542.32.00.51
Technology
FLASH - NAND
Voltage - Supply
2.7V~3.6V
Terminal Position
DUAL
Number of Functions
1
Supply Voltage
3V
JESD-30 Code
R-PDSO-G48
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
8Gb 1G x 8
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Memory Interface
Parallel
Organization
1GX8
Memory Width
8
Write Cycle Time - Word, Page
25ns
Memory Density
8589934592 bit
Programming Voltage
3V
Height Seated (Max)
1.2mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
S34ML08G201TFB003 Product Details
S34ML08G201TFB003 Overview
As far as memory types are concerned, Non-Volatile is considered to be its memory type. It is available in a case with a Tape & Reel (TR) shape. In the case of 48-TFSOP (0.724, 18.40mm Width), it is embedded within the case. It is estimated that the memory size on the chip is 8Gb 1G x 8. There is a mainstream memory format used by this device, which is called FLASH-format memory. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. It is supplied votage within 2.7V~3.6V. As far as the mounting type is concerned, Surface Mount is recommended. On the chip, there are 48 terminations. This part supports as many as 1 functions for the comprehensive working procedure. In order to power this memory device, 3V will be necessary. As a member of the Automotive, AEC-Q100, ML-2 series memory devices, this part plays an important role for its target applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.
S34ML08G201TFB003 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
S34ML08G201TFB003 Applications
There are a lot of Cypress Semiconductor Corp S34ML08G201TFB003 Memory applications.