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S34ML08G201TFB003

S34ML08G201TFB003

S34ML08G201TFB003

Cypress Semiconductor Corp

Automotive, AEC-Q100, ML-2 Memory IC Automotive, AEC-Q100, ML-2 Series

SOT-23

S34ML08G201TFB003 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724, 18.40mm Width)
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q100, ML-2
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
Terminal Finish Matte Tin (Sn)
HTS Code 8542.32.00.51
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Number of Functions 1
Supply Voltage 3V
JESD-30 Code R-PDSO-G48
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 8Gb 1G x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Memory Format FLASH
Memory Interface Parallel
Organization 1GX8
Memory Width 8
Write Cycle Time - Word, Page 25ns
Memory Density 8589934592 bit
Programming Voltage 3V
Height Seated (Max) 1.2mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
S34ML08G201TFB003 Product Details

S34ML08G201TFB003 Overview


As far as memory types are concerned, Non-Volatile is considered to be its memory type. It is available in a case with a Tape & Reel (TR) shape. In the case of 48-TFSOP (0.724, 18.40mm Width), it is embedded within the case. It is estimated that the memory size on the chip is 8Gb 1G x 8. There is a mainstream memory format used by this device, which is called FLASH-format memory. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. It is supplied votage within 2.7V~3.6V. As far as the mounting type is concerned, Surface Mount is recommended. On the chip, there are 48 terminations. This part supports as many as 1 functions for the comprehensive working procedure. In order to power this memory device, 3V will be necessary. As a member of the Automotive, AEC-Q100, ML-2 series memory devices, this part plays an important role for its target applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.

S34ML08G201TFB003 Features


Package / Case: 48-TFSOP (0.724, 18.40mm Width)

S34ML08G201TFB003 Applications


There are a lot of Cypress Semiconductor Corp S34ML08G201TFB003 Memory applications.

  • personal computers
  • eSRAM
  • hard disk drive (HDD)
  • networks
  • telecommunications
  • DVD disk buffer
  • nonvolatile BIOS memory
  • networking
  • graphics card
  • cell phones

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