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S34MS01G200GHI003

S34MS01G200GHI003

S34MS01G200GHI003

Cypress Semiconductor Corp

MS-2 Memory IC MS-2 Series 8mm mm

SOT-23

S34MS01G200GHI003 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 67-VFBGA
Surface Mount YES
Number of Pins 67
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Series MS-2
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 67
HTS Code 8542.32.00.51
Technology FLASH - NAND
Voltage - Supply 1.7V~1.95V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.8mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Supply Voltage-Max (Vsup) 1.95V
Supply Voltage-Min (Vsup) 1.7V
Memory Size 1Gb 128M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Memory Format FLASH
Memory Interface Parallel
Organization 128MX8
Memory Width 8
Write Cycle Time - Word, Page 45ns
Memory Density 1073741824 bit
Programming Voltage 1.8V
Height Seated (Max) 1mm
Length 8mm
Width 6.5mm
RoHS Status ROHS3 Compliant
S34MS01G200GHI003 Product Details

S34MS01G200GHI003 Overview


A Non-Volatile-type memory can be classified as the memory type of this device. It is available in a case with a Tape & Reel (TR) shape. The case is embedded in 67-VFBGA. This chip has an 1Gb 128M x 8 size of memory on it, so a lot of data can be stored on it. FLASH-format memory is used in this device, which is a mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A supply voltage of 1.7V~1.95V can be applied to it. The recommended mounting type for this device is Surface Mount. The chip is terminated with 67 terminations. The comprehensive working procedure of this part involves 1 functions. In order to function properly, this ic memory chip should be powered by a voltage of 1.8V. It is encased in an 67-pin package that contains this ic memory chip. MS-2 series memory ics play a crucial role in the target applications of this part. 1.8V programming voltage is required to change the state of certain nonvolatile memory arrays.

S34MS01G200GHI003 Features


Package / Case: 67-VFBGA
67 Pins

S34MS01G200GHI003 Applications


There are a lot of Cypress Semiconductor Corp S34MS01G200GHI003 Memory applications.

  • multimedia computers
  • eSRAM
  • nonvolatile BIOS memory
  • workstations,
  • eDRAM
  • networking
  • graphics card
  • cell phones
  • servers
  • telecommunications

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