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S34MS01G200TFI003

S34MS01G200TFI003

S34MS01G200TFI003

Cypress Semiconductor Corp

MS-2 Memory IC MS-2 Series 18.4mm mm

SOT-23

S34MS01G200TFI003 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724, 18.40mm Width)
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Published 2014
Series MS-2
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 48
Terminal Finish Matte Tin (Sn)
HTS Code 8542.32.00.51
Technology FLASH - NAND
Voltage - Supply 1.7V~1.95V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.5mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G48
Supply Voltage-Max (Vsup) 1.95V
Supply Voltage-Min (Vsup) 1.7V
Memory Size 1Gb 128M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Memory Format FLASH
Memory Interface Parallel
Organization 128MX8
Memory Width 8
Write Cycle Time - Word, Page 45ns
Memory Density 1073741824 bit
Programming Voltage 1.8V
Height Seated (Max) 1.2mm
Length 18.4mm
Width 12mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
S34MS01G200TFI003 Product Details

S34MS01G200TFI003 Overview


There is a Non-Volatile memory type associated with this device. In addition, memory ics is available in a Tape & Reel (TR) case as well. The 48-TFSOP (0.724, 18.40mm Width) case contains it. It is estimated that the memory size on the chip is 1Gb 128M x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of -40°C~85°C TA, this device is well suited to a wide range of applications that require high performance. A voltage of 1.7V~1.95V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. On the chip, there are 48 terminations. The comprehensive working procedure is supported by 1 functions in this part. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. In its target applications, this memory ics plays an important role as a member of the MS-2 series of memory devices. A programming voltage of 1.8V is required to change a nonvolatile memory array's state.

S34MS01G200TFI003 Features


Package / Case: 48-TFSOP (0.724, 18.40mm Width)

S34MS01G200TFI003 Applications


There are a lot of Cypress Semiconductor Corp S34MS01G200TFI003 Memory applications.

  • mainframes
  • multimedia computers
  • networking
  • main computer memory
  • data buffer
  • servers
  • graphics card
  • eDRAM
  • Cache memory
  • cell phones

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