Automotive, AEC-Q100, MS-1 Memory IC Automotive, AEC-Q100, MS-1 Series 11mm mm
SOT-23
S34MS02G100BHB000 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
63-VFBGA
Surface Mount
YES
Operating Temperature
-40°C~105°C TA
Packaging
Tray
Series
Automotive, AEC-Q100, MS-1
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
63
HTS Code
8542.32.00.51
Technology
FLASH - NAND
Voltage - Supply
1.7V~1.95V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
1.8V
Terminal Pitch
0.8mm
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PBGA-B63
Supply Voltage-Max (Vsup)
1.95V
Supply Voltage-Min (Vsup)
1.7V
Memory Size
2Gb 256M x 8
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Memory Interface
Parallel
Organization
256MX8
Memory Width
8
Write Cycle Time - Word, Page
45ns
Memory Density
2147483648 bit
Programming Voltage
1.8V
Height Seated (Max)
1mm
Length
11mm
Width
9mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
210
$7.61381
$1598.9001
S34MS02G100BHB000 Product Details
S34MS02G100BHB000 Overview
Its memory type can be classified as Non-Volatile. It is supplied votage within Tray. There is a 63-VFBGA case embedded in it. The memory size of the chip is 2Gb 256M x 8 Mb. There is a mainstream memory format used by this device, which is called FLASH-format memory. -40°C~105°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 1.7V~1.95V can be applied to it. The recommended mounting type for memory ics is Surface Mount. There are 63 terminations on the chip. The comprehensive working procedure of this part involves 1 functions. The memory device designed for this application has been designed to be powered by an 1.8V power supply. Its target applications rely heavily on the Automotive, AEC-Q100, MS-1 series memory devices. To alter the state of certain nonvolatile memory arrays, 1.8V programming voltage is required.
S34MS02G100BHB000 Features
Package / Case: 63-VFBGA
S34MS02G100BHB000 Applications
There are a lot of Cypress Semiconductor Corp S34MS02G100BHB000 Memory applications.