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S34MS02G200GHI000

S34MS02G200GHI000

S34MS02G200GHI000

Cypress Semiconductor Corp

MS-2 Memory IC MS-2 Series 8mm mm

SOT-23

S34MS02G200GHI000 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case 67-VFBGA
Surface Mount YES
Number of Pins 67
Operating Temperature -40°C~85°C TA
Packaging Tray
Published 2016
Series MS-2
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 67
HTS Code 8542.32.00.51
Technology FLASH - NAND
Voltage - Supply 1.7V~1.95V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.8mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Supply Voltage-Max (Vsup) 1.95V
Supply Voltage-Min (Vsup) 1.7V
Memory Size 2Gb 256M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Memory Format FLASH
Memory Interface Parallel
Organization 256MX8
Memory Width 8
Write Cycle Time - Word, Page 45ns
Memory Density 2147483648 bit
Programming Voltage 1.8V
Height Seated (Max) 1mm
Length 8mm
Width 6.5mm
RoHS Status ROHS3 Compliant
S34MS02G200GHI000 Product Details

S34MS02G200GHI000 Overview


A Non-Volatile-type memory can be classified as the memory type of this device. There is a Tray case available. Embedded in the 67-VFBGA case, memory ics is a single file. There is 2Gb 256M x 8 of memory on the chip. There is a mainstream memory format used by this device, which is called FLASH-format memory. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.95V can be supplied to memory ics. A Surface Mount mounting type is recommended for this product. On the chip, there are 67 terminations that are planted. For a comprehensive working procedure, this part supports as many as 1 functions. In order to function properly, this ic memory chip should be powered by a voltage of 1.8V. A 67-pin package containing this memory device is used to house this device. This part is part of the MS-2 series of memory devices, which play a key role in its target applications. The programming voltage required for certain nonvolatile memory arrays is 1.8V.

S34MS02G200GHI000 Features


Package / Case: 67-VFBGA
67 Pins

S34MS02G200GHI000 Applications


There are a lot of Cypress Semiconductor Corp S34MS02G200GHI000 Memory applications.

  • eDRAM
  • nonvolatile BIOS memory
  • networks
  • hard disk drive (HDD)
  • personal computers
  • cell phones
  • telecommunications
  • Cache memory
  • multimedia computers
  • printers

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