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S40410161B1B2I013

S40410161B1B2I013

S40410161B1B2I013

Cypress Semiconductor Corp

e.MMC 1B1 Memory IC e.MMC 1B1 Series 18mm mm

SOT-23

S40410161B1B2I013 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 100-LBGA
Surface Mount YES
Number of Pins 100
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Series e.MMC 1B1
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 100
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 16Gb 2G x 8
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 200MHz
Memory Format FLASH
Memory Interface Parallel
Organization 16GX8
Memory Width 8
Memory Density 137438953472 bit
Programming Voltage 3V
Alternate Memory Width 4
Height Seated (Max) 1.4mm
Length 18mm
Width 14mm
RoHS Status ROHS3 Compliant
S40410161B1B2I013 Product Details

S40410161B1B2I013 Overview


In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. As you can see, it is embedded in 100-LBGA case. 16Gb 2G x 8 is the chip's memory size. This device utilizes a FLASH format memory which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V volts. It is recommended to mount it in the Surface Mount mounting type. As you can see from the diagram, the chip is planted with 100 terminations. As many as 1 functions are supported for comprehensive working. In order to operate this memory device, it must be supplied with 3V of power. In order to operate effectively, the memory rotates at a clock frequency within a range of 200MHz. This memory device is enclosed in a 100-pin package. Its target applications rely heavily on the e.MMC 1B1 series memory devices. The programming voltage required for certain nonvolatile memory arrays is 3V.

S40410161B1B2I013 Features


Package / Case: 100-LBGA
100 Pins

S40410161B1B2I013 Applications


There are a lot of Cypress Semiconductor Corp S40410161B1B2I013 Memory applications.

  • embedded logic
  • multimedia computers
  • DVD disk buffer
  • eSRAM
  • workstations,
  • eDRAM
  • personal digital assistants
  • networking
  • printers
  • personal computers

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