S70GL02GT11FHV010

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Manufacturer part number:S70GL02GT11FHV010

Manufacturer:Cypress Semiconductor Corp

Description:GL-T Memory IC GL-T Series 13mm mm

Case Package:SOT-23

Datasheet:S70GL02GT11FHV010 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mounting Type	Surface Mount
Package / Case	64-LBGA
Surface Mount	YES
Operating Temperature	-40°C~105°C TA
Packaging	Tray
Series	GL-T
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	64
Technology	FLASH - NOR
Voltage - Supply	2.7V~3.6V
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Number of Functions	1
Supply Voltage	3V
Terminal Pitch	1mm
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PBGA-B64
Supply Voltage-Max (Vsup)	3.6V
Supply Voltage-Min (Vsup)	2.7V
Memory Size	2Gb 256M x 8 128M x 16
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Access Time	110ns
Memory Format	FLASH
Memory Interface	Parallel
Organization	128MX16
Memory Width	16
Memory Density	2147483648 bit
Programming Voltage	3V
Alternate Memory Width	8
Height Seated (Max)	1.4mm
Length	13mm
Width	11mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
180	$20.14128	$3625.4304

S70GL02GT11FHV010 Overview

In terms of its memory type, it can be classified as Non-Volatile. There is a Tray case available. 64-LBGA case encloses it. The chip has an 2Gb 256M x 8 128M x 16 memory. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. The recommended mounting type for this device is Surface Mount. There are 64 terminations on the chip. The part supports at least 1 functions to ensure a comprehensive working process. A voltage of 3V is required for the operation of this memory device. GL-T series memory ics play a crucial role in the target applications of this part. To alter the state of certain nonvolatile memory arrays, 3V programming voltage is required.