1N4935G-T

new-10%

Manufacturer part number:1N4935G-T

Manufacturer:Diodes Incorporated

Description:DIODE GEN PURP 200V 1A DO41

Case Package:SOT-23

Datasheet:1N4935G-T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	DO-204AL, DO-41, Axial
Number of Pins	2
Weight	299.994654mg
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
HTS Code	8541.10.00.80
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	1N4935
Pin Count	2
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 200V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 1A
Case Connection	ISOLATED
Forward Current	1A
Operating Temperature - Junction	-65°C~150°C
Max Surge Current	30A
Output Current-Max	1A
Forward Voltage	1.2V
Max Reverse Voltage (DC)	200V
Average Rectified Current	1A
Reverse Recovery Time	200 ns
Peak Reverse Current	5μA
Max Repetitive Reverse Voltage (Vrrm)	200V
Peak Non-Repetitive Surge Current	30A
Recovery Time	200 ns
Reverse Voltage (DC)	200V
Height	2.72mm
Length	5.21mm
Width	2.72mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant