APT13003HU-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
APT13003HU-G1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
20W
Power - Max
20W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
13 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic
400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage
465V
Voltage - Collector Emitter Breakdown (Max)
465V
Current - Collector (Ic) (Max)
1.5A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
APT13003HU-G1 Product Details
APT13003HU-G1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 13 @ 500mA 2V DC current gain.When VCE saturation is 400mV @ 250mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor comes in a supplier device package of TO-126.The device has a 465V maximal voltage - Collector Emitter Breakdown.Collector current can be as low as 1.5A volts at its maximum.
APT13003HU-G1 Features
the DC current gain for this device is 13 @ 500mA 2V the vce saturation(Max) is 400mV @ 250mA, 1A the supplier device package of TO-126
APT13003HU-G1 Applications
There are a lot of Diodes Incorporated APT13003HU-G1 applications of single BJT transistors.