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APT13003HU-G1

APT13003HU-G1

APT13003HU-G1

Diodes Incorporated

APT13003HU-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

APT13003HU-G1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 20W
Power - Max 20W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage 465V
Voltage - Collector Emitter Breakdown (Max) 465V
Current - Collector (Ic) (Max) 1.5A
Frequency - Transition 4MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
APT13003HU-G1 Product Details

APT13003HU-G1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 13 @ 500mA 2V DC current gain.When VCE saturation is 400mV @ 250mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor comes in a supplier device package of TO-126.The device has a 465V maximal voltage - Collector Emitter Breakdown.Collector current can be as low as 1.5A volts at its maximum.

APT13003HU-G1 Features


the DC current gain for this device is 13 @ 500mA 2V
the vce saturation(Max) is 400mV @ 250mA, 1A
the supplier device package of TO-126

APT13003HU-G1 Applications


There are a lot of Diodes Incorporated APT13003HU-G1 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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