B2100-13-F datasheet pdf and Diodes - Rectifiers - Single product details from Diodes Incorporated stock available on our website
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B2100-13-F Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Number of Pins
2
Weight
92.986436mg
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2017
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Additional Feature
LOW POWER LOSS, FREE WHEELING DIODE
Capacitance
75pF
Subcategory
Rectifier Diodes
Voltage - Rated DC
100V
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
B2100
Pin Count
2
Number of Elements
1
Polarity
Standard
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
7μA @ 100V
Output Current
2A
Voltage - Forward (Vf) (Max) @ If
790mV @ 2A
Forward Current
2A
Operating Temperature - Junction
-65°C~150°C
Application
EFFICIENCY
Forward Voltage
790mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
2A
Number of Phases
1
Peak Reverse Current
7μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Capacitance @ Vr, F
75pF @ 4V 1MHz
Peak Non-Repetitive Surge Current
50A
Reverse Voltage
100V
Max Forward Surge Current (Ifsm)
50A
Max Junction Temperature (Tj)
150°C
Height
2.5mm
Length
4.57mm
Width
3.94mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.14800
$0.444
6,000
$0.14000
$0.84
15,000
$0.13200
$1.98
30,000
$0.12800
$3.84
B2100-13-F Product Details
B2100-13-F Description
B2100-13-F is a 2A high-voltage Schottky barrier rectifier. The Schottky Diode is a type of semiconductor diode that can be used in a variety of wave shaping, switching, and rectification applications the same as any other junction diode. The main advantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.
B2100-13-F Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Surge Overload Rating to 50A Peak
For Use in Low Voltage, High-Frequency Inverters, Free Wheeling, and Polarity Protection Applications
High-Temperature Soldering: +260°C/10 Second at Terminal