BCX5210TA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 150MHz.An input voltage of 60V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCX5210TA Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

BCX5210TA Applications

There are a lot of Diodes Incorporated BCX5210TA applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter