D1G-T

new-10%

Manufacturer part number:D1G-T

Manufacturer:Diodes Incorporated

Description:DIODE GEN PURP 50V 1A T1

Case Package:SOT-23

Datasheet:D1G-T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	T1, Axial
Number of Pins	2
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	40
Pin Count	2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 50V
Voltage - Forward (Vf) (Max) @ If	1V @ 1A
Case Connection	ISOLATED
Forward Current	1A
Operating Temperature - Junction	-65°C~150°C
Max Surge Current	30A
Output Current-Max	1A
Forward Voltage	1V
Max Reverse Voltage (DC)	50V
Average Rectified Current	1A
Reverse Recovery Time	2 μs
Peak Reverse Current	5μA
Max Repetitive Reverse Voltage (Vrrm)	50V
Capacitance @ Vr, F	8pF @ 4V 1MHz
Peak Non-Repetitive Surge Current	30A
Recovery Time	2 μs
Reverse Voltage (DC)	50V
Height	2.6mm
Length	3.2mm
Width	2.6mm
RoHS Status	ROHS3 Compliant