DCP55-16-13 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.200MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 60V volts.Maximum collector currents can be below 1A volts.

DCP55-16-13 Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

DCP55-16-13 Applications

There are a lot of Diodes Incorporated DCP55-16-13 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting