DCX56-16-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DCX56-16-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DCX56
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
200MHz
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
63
Height
1.5mm
Length
4.5mm
Width
2.48mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.178680
$0.17868
10
$0.168566
$1.68566
100
$0.159025
$15.9025
500
$0.150023
$75.0115
1000
$0.141531
$141.531
DCX56-16-13 Product Details
DCX56-16-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 200MHz.A breakdown input voltage of 80V volts can be used.When collector current reaches its maximum, it can reach 1A volts.
DCX56-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 200MHz
DCX56-16-13 Applications
There are a lot of Diodes Incorporated DCX56-16-13 applications of single BJT transistors.