DDTA115GE-7-F

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DDTA115GE-7-F

Manufacturer part number:DDTA115GE-7-F

Manufacturer:Diodes Incorporated

Description:DDTA115GE-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Diodes Incorporated stock available on our website

Case Package:SOT-23

Datasheet:DDTA115GE-7-F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-523
Number of Pins	3
Weight	2.012816mg
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT IN BIAS RESISTOR
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	150mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	DDTA115
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	PNP
Element Configuration	Single
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	82 @ 5mA 5V
Current - Collector Cutoff (Max)	500nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Frequency - Transition	250MHz
hFE Min	82
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	100 k Ω
Height	750μm
Length	1.6mm
Width	800μm
RoHS Status	ROHS3 Compliant