Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Non-Inverting 2 600V V 8-SOIC (0.154, 3.90mm Width) High-Side or Low-Side
SOT-23
DGD2101MS8-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Operating Temperature
-40°C~125°C TA
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Supply
10V~20V
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
15V
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G8
Input Type
Non-Inverting
Rise / Fall Time (Typ)
70ns 35ns
Interface IC Type
HALF BRIDGE BASED MOSFET DRIVER
Channel Type
Independent
Number of Drivers
2
Output Peak Current Limit-Nom
0.6A
Driven Configuration
High-Side or Low-Side
Gate Type
IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink)
290mA 600mA
High Side Driver
YES
Logic Voltage - VIL, VIH
0.8V 2.5V
High Side Voltage - Max (Bootstrap)
600V
Height Seated (Max)
1.75mm
Length
4.9mm
Width
3.9mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DGD2101MS8-13 Product Details
DGD2101MS8-13 Overview
The 8-SOIC (0.154, 3.90mm Width) package provides greater flexibility.Tape & Reel (TR) represents the packaging method.2 drivers are incorporated for its configuration.Surface Mount is the way in which it is mounted.In the absence of a 10V~20V supply voltage, it can demonstrate its superiority.A gate type of IGBT, N-Channel MOSFET is used in its design.For this device, the temperature range is -40°C~125°C TA.A type of Non-Inverting is used for input in this program.8 terminations constitute its foundation.In addition, it is specifically designed to operate with a supply voltage of 15V.In this case, HALF BRIDGE BASED MOSFET DRIVER serves as the interface IC.Ideally, the high-side voltage should not exceed 600V.
DGD2101MS8-13 Features
Embedded in the Tape & Reel (TR) package 2 drivers Employing a gate type of IGBT, N-Channel MOSFET High-side voltage - Max (Bootstrap) of 600V
DGD2101MS8-13 Applications
There are a lot of Diodes Incorporated DGD2101MS8-13 gate drivers applications.
High-speed communications
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Solar inverters
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
3-Phase Motor Inverter Driver
Isolated Gate Driver Supplies
Broadcast equipment
Uninterruptible Power Supplies (UPS)
Isolated Supplies for controller area network (CAN),