DMG1016UDW-7

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DMG1016UDW-7

Manufacturer part number:DMG1016UDW-7

Manufacturer:Diodes Incorporated

Description:DMG1016UDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website

Case Package:SOT-23

Datasheet:DMG1016UDW-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	750mOhm
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	330mW
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	DMG1016UDW
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330mW
Turn On Delay Time	5.1 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	450m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.07A 845mA
Gate Charge (Qg) (Max) @ Vgs	0.74nC @ 4.5V
Rise Time	7.4ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	12.3 ns
Turn-Off Delay Time	26.7 ns
Continuous Drain Current (ID)	-845mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free