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DMG3420U-7

DMG3420U-7

DMG3420U-7

Diodes Incorporated

DMG3420U-7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

SOT-23

DMG3420U-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingDigi-Reel®
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 29mOhm
Additional FeatureHIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Power Dissipation-Max 740mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation740mW
Turn On Delay Time6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 434.7pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.47A Ta
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Rise Time8.3ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 10V
Vgs (Max) ±12V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 21.6 ns
Continuous Drain Current (ID) 5.47A
Threshold Voltage 950mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16158 items

Pricing & Ordering

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DMG3420U-7 Product Details

DMG3420U-7 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 434.7pF @ 10V.This device conducts a continuous drain current (ID) of 5.47A, which is the maximum continuous current transistor can conduct.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.Its turn-off delay time is 21.6 ns, which is the time to charge the device's input capacitance before drain current conduction begins.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 950mV threshold voltage. Using drive voltage (1.8V 10V), this device helps reduce its power consumption.

DMG3420U-7 Features


a continuous drain current (ID) of 5.47A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 21.6 ns
a threshold voltage of 950mV

DMG3420U-7 Applications


There are a lot of Diodes Incorporated DMG3420U-7 applications of single MOSFETs transistors.

  • Solar Inverter
  • DC-to-DC converters
  • Motor Drives and Uninterruptible Power Supples
  • General Purpose Interfacing Switch
  • LCD/LED/ PDP TV Lighting
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • AC-DC Power Supply
  • DC/DC converters
  • Motor drives and Uninterruptible Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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