DMN10H170SFG-7

new-10%

Manufacturer part number:DMN10H170SFG-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 100V 2.9A POWERDI

Case Package:SOT-23

Datasheet:DMN10H170SFG-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	940mW Ta
Element Configuration	Single
Turn On Delay Time	4.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	122m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870.7pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.9A Ta 8.5A Tc
Gate Charge (Qg) (Max) @ Vgs	14.9nC @ 10V
Rise Time	2.3ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.4 ns
Turn-Off Delay Time	13.9 ns
Continuous Drain Current (ID)	8.5A
Gate to Source Voltage (Vgs)	20V
Height	850μm
Length	3.35mm
Width	3.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant