DMN2400UFB-7

new-10%

Manufacturer part number:DMN2400UFB-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 20V 750MA 3DFN

Case Package:SOT-23

Datasheet:DMN2400UFB-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	470mW Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	4.11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	550m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 16V
Current - Continuous Drain (Id) @ 25°C	750mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.5nC @ 4.5V
Rise Time	3.82ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	9.6 ns
Turn-Off Delay Time	14.8 ns
Continuous Drain Current (ID)	750mA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.75A
Drain-source On Resistance-Max	0.55Ohm
Drain to Source Breakdown Voltage	20V
Height	480μm
Length	1.08mm
Width	675μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free