DMN3005LK3-13

new-10%

Manufacturer part number:DMN3005LK3-13

Manufacturer:Diodes Incorporated

Description:MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W

Case Package:SOT-23

Datasheet:DMN3005LK3-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	no
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.68W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	7.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4342pF @ 15V
Current - Continuous Drain (Id) @ 25°C	14.5A Ta
Gate Charge (Qg) (Max) @ Vgs	46.9nC @ 4.5V
Rise Time	22.8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	43.5 ns
Turn-Off Delay Time	73.4 ns
Continuous Drain Current (ID)	14.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	22A
Drain-source On Resistance-Max	0.0065Ohm
Pulsed Drain Current-Max (IDM)	48A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant