DMN55D0UT-7

new-10%

Manufacturer part number:DMN55D0UT-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 50V 160MA SOT-523

Case Package:SOT-23

Datasheet:DMN55D0UT-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-523
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	200mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200mW
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 10V
Current - Continuous Drain (Id) @ 25°C	160mA Ta
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4V
Vgs (Max)	±12V
Continuous Drain Current (ID)	160mA
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	4Ohm
Drain to Source Breakdown Voltage	50V
Height	750μm
Length	1.6mm
Width	800μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free