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DMN55D0UTQ-7

DMN55D0UTQ-7

DMN55D0UTQ-7

Diodes Incorporated

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4 Ω @ 100mA, 4V ±12V 25pF @ 10V 50V SOT-523

SOT-23

DMN55D0UTQ-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 200mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Current - Continuous Drain (Id) @ 25°C 160mA Ta
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Vgs (Max) ±12V
Continuous Drain Current (ID) 160mA
Drain Current-Max (Abs) (ID) 0.16A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 50V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.038191 $0.038191
10 $0.036029 $0.36029
100 $0.033990 $3.399
500 $0.032066 $16.033
1000 $0.030251 $30.251
DMN55D0UTQ-7 Product Details

DMN55D0UTQ-7 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 25pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 0.16A.In order for DS breakdown voltage to remain above 50V, it should remain above the 50V level.The transistor must receive a 50V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4V).

DMN55D0UTQ-7 Features


a continuous drain current (ID) of 160mA
a 50V drain to source voltage (Vdss)


DMN55D0UTQ-7 Applications


There are a lot of Diodes Incorporated
DMN55D0UTQ-7 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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