DMN65D8L-7

new-10%

Manufacturer part number:DMN65D8L-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 60V 310MA SOT23

Case Package:SOT-23

Datasheet:DMN65D8L-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	370mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	540mW
Turn On Delay Time	2.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	22pF @ 25V
Current - Continuous Drain (Id) @ 25°C	310mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.87nC @ 10V
Rise Time	2.8ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	12.6 ns
Continuous Drain Current (ID)	310mA
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.27A
Drain-source On Resistance-Max	4Ohm
Drain to Source Breakdown Voltage	60V
Height	1.1mm
Length	3mm
Width	1.4mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free