DMP1045U-7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
DMP1045U-7 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
800mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
800mW
Turn On Delay Time
15.7 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
31m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1357pF @ 10V
Current - Continuous Drain (Id) @ 25°C
4A Ta
Gate Charge (Qg) (Max) @ Vgs
15.8nC @ 4.5V
Rise Time
23.3ns
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
106.9 ns
Turn-Off Delay Time
91.2 ns
Continuous Drain Current (ID)
4A
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
5.2A
Drain to Source Breakdown Voltage
-12V
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DMP1045U-7 Product Details
DMP1045U-7 DESCRIPTION
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) while maintaining superior switching performance, which makes the device ideal for high-efficiency powermanagement applications.