DMT68M8LSS-13

new-10%

Manufacturer part number:DMT68M8LSS-13

Manufacturer:Diodes Incorporated

Description:Trans Mosfet N-ch 60V 28.9A 8-PIN SOIC T/r

Case Package:SOT-23

Datasheet:DMT68M8LSS-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.9W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2107pF @ 30V
Current - Continuous Drain (Id) @ 25°C	28.9A Tc
Gate Charge (Qg) (Max) @ Vgs	31.8nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	12.1A
Drain-source On Resistance-Max	0.0085Ohm
Pulsed Drain Current-Max (IDM)	100A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	54.2 mJ
RoHS Status	ROHS3 Compliant