DPLS160-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DPLS160-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
220MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Gain Bandwidth Product
220MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
330mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
220MHz
Collector Emitter Saturation Voltage
-330mV
Max Breakdown Voltage
60V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
-5V
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.079272
$0.079272
500
$0.058288
$29.144
1000
$0.048574
$48.574
2000
$0.044563
$89.126
5000
$0.041648
$208.24
10000
$0.038742
$387.42
15000
$0.037468
$562.02
50000
$0.036841
$1842.05
DPLS160-7 Product Details
DPLS160-7 Overview
In this device, the DC current gain is 200 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -330mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 330mV @ 100mA, 1A.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 220MHz.Input voltage breakdown is available at 60V volts.The maximum collector current is 1A volts.
DPLS160-7 Features
the DC current gain for this device is 200 @ 1mA 5V a collector emitter saturation voltage of -330mV the vce saturation(Max) is 330mV @ 100mA, 1A the emitter base voltage is kept at -5V a transition frequency of 220MHz
DPLS160-7 Applications
There are a lot of Diodes Incorporated DPLS160-7 applications of single BJT transistors.