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DPLS160-7

DPLS160-7

DPLS160-7

Diodes Incorporated

DPLS160-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DPLS160-7 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 220MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Gain Bandwidth Product 220MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 330mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 220MHz
Collector Emitter Saturation Voltage -330mV
Max Breakdown Voltage 60V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -5V
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.079272 $0.079272
500 $0.058288 $29.144
1000 $0.048574 $48.574
2000 $0.044563 $89.126
5000 $0.041648 $208.24
10000 $0.038742 $387.42
15000 $0.037468 $562.02
50000 $0.036841 $1842.05
DPLS160-7 Product Details

DPLS160-7 Overview


In this device, the DC current gain is 200 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -330mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 330mV @ 100mA, 1A.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 220MHz.Input voltage breakdown is available at 60V volts.The maximum collector current is 1A volts.

DPLS160-7 Features


the DC current gain for this device is 200 @ 1mA 5V
a collector emitter saturation voltage of -330mV
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz

DPLS160-7 Applications


There are a lot of Diodes Incorporated DPLS160-7 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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