HBDM60V600W-7

new-10%

Manufacturer part number:HBDM60V600W-7

Manufacturer:Diodes Incorporated

Description:Bipolar Transistors - BJT 200mW Half H-Bridge

Case Package:SOT-23

Datasheet:HBDM60V600W-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	200mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Frequency	100MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	HBDM60V600
Pin Count	6
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	200mW
Gain Bandwidth Product	100MHz
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	400mV
Max Collector Current	600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA 1V / 100 @ 150mA 10V
Current - Collector Cutoff (Max)	100nA
Vce Saturation (Max) @ Ib, Ic	400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage	60V
Voltage - Collector Emitter Breakdown (Max)	65V 60V
Current - Collector (Ic) (Max)	500mA 600mA
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	-500mV
Max Breakdown Voltage	60V
Collector Base Voltage (VCBO)	80V
Emitter Base Voltage (VEBO)	6V
hFE Min	50
Continuous Collector Current	500mA
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant