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IMT4-7-F

IMT4-7-F

IMT4-7-F

Diodes Incorporated

Bipolar Transistors - BJT PNP BIPOLAR

SOT-23

IMT4-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 29.993795mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 225mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MT4
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 225mW
Gain Bandwidth Product 140MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Transition Frequency 140MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
Height 1.1mm
Length 3mm
Width 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

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