MMBT3906-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBT3906-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
200.998119mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
Series
Automotive, AEC-Q101
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn85Pb15)
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
-200mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
MMBT3906
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Max Frequency
250MHz
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
-400mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Continuous Collector Current
-200mA
Turn On Time-Max (ton)
70ns
Height
1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.017646
$0.017646
500
$0.012975
$6.4875
1000
$0.010813
$10.813
2000
$0.009920
$19.84
5000
$0.009271
$46.355
10000
$0.008624
$86.24
15000
$0.008341
$125.115
50000
$0.008201
$410.05
MMBT3906-7 Product Details
MMBT3906-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Continuous collector voltages should be kept at -200mA to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.A transition frequency of 250MHz is present in the part.Single BJT transistor can be broken down at a voltage of 40V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-7 Features
the DC current gain for this device is 100 @ 10mA 1V a collector emitter saturation voltage of -400mV the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at -5V the current rating of this device is -200mA a transition frequency of 250MHz
MMBT3906-7 Applications
There are a lot of Diodes Incorporated MMBT3906-7 applications of single BJT transistors.