MMBTA56-7 Overview

In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at -4V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.In this part, there is a transition frequency of 50MHz.Single BJT transistor can be broken down at a voltage of 80V volts.Maximum collector currents can be below 500mA volts.

MMBTA56-7 Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -100mA
a transition frequency of 50MHz

MMBTA56-7 Applications

There are a lot of Diodes Incorporated MMBTA56-7 applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter