ZTX557 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZTX557 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
1W
Terminal Form
WIRE
Current Rating
-500mA
Base Part Number
ZTX557
Pin Count
3
JESD-30 Code
R-PSIP-W3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
75MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
300V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
-300mV
Collector Base Voltage (VCBO)
-300V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-500mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
ZTX557 Product Details
ZTX557 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 50mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.A maximum collector current of 500mA volts is possible.
ZTX557 Features
the DC current gain for this device is 50 @ 50mA 10V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 75MHz
ZTX557 Applications
There are a lot of Diodes Incorporated ZTX557 applications of single BJT transistors.