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ZTX603STOA

ZTX603STOA

ZTX603STOA

Diodes Incorporated

ZTX603STOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX603STOA Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 80V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX603
Pin Count 3
Reference Standard CECC
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1V @ 1mA, 1A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 1V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
ZTX603STOA Product Details

ZTX603STOA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 1A 5V.A collector emitter saturation voltage of 1V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

ZTX603STOA Features


the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz

ZTX603STOA Applications


There are a lot of Diodes Incorporated ZTX603STOA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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