ZTX605STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX605STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
120V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX605
Pin Count
3
Reference Standard
CECC
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A 5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage
120V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
1V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
1A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.296291
$0.296291
10
$0.279520
$2.7952
100
$0.263698
$26.3698
500
$0.248772
$124.386
1000
$0.234690
$234.69
ZTX605STZ Product Details
ZTX605STZ Overview
This device has a DC current gain of 2000 @ 1A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A 1A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 10V can result in a high level of efficiency.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX605STZ Features
the DC current gain for this device is 2000 @ 1A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1.5V @ 1mA, 1A the emitter base voltage is kept at 10V the current rating of this device is 1A a transition frequency of 150MHz
ZTX605STZ Applications
There are a lot of Diodes Incorporated ZTX605STZ applications of single BJT transistors.