ZTX857STOB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX857STOB Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
HTS Code
8541.29.00.75
Voltage - Rated DC
300V
Max Power Dissipation
1.2W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Current Rating
5A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX857
Pin Count
3
JESD-30 Code
R-PSIP-W3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
80MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 600mA, 3A
Collector Emitter Breakdown Voltage
300V
Transition Frequency
80MHz
Collector Base Voltage (VCBO)
330V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
3A
Height
4.01mm
Length
4.77mm
Width
2.41mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
ZTX857STOB Product Details
ZTX857STOB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 600mA, 3A.Continuous collector voltage should be kept at 3A for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.80MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 3A volts.
ZTX857STOB Features
the DC current gain for this device is 100 @ 500mA 10V the vce saturation(Max) is 250mV @ 600mA, 3A the emitter base voltage is kept at 6V the current rating of this device is 5A a transition frequency of 80MHz
ZTX857STOB Applications
There are a lot of Diodes Incorporated ZTX857STOB applications of single BJT transistors.