ZVN2110GTC

new-10%

Manufacturer part number:ZVN2110GTC

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 100V 500MA SOT223

Case Package:SOT-23

Datasheet:ZVN2110GTC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	FAST SWITCHING
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Current Rating	500mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Number of Channels	1
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 25V
Current - Continuous Drain (Id) @ 25°C	500mA Ta
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	500mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.5A
Drain-source On Resistance-Max	4Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	6A
Height	1.65mm
Length	6.7mm
Width	3.7mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free