ZXMN10A07FTA

new-10%

Manufacturer part number:ZXMN10A07FTA

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 100V 700MA SOT23-3

Case Package:SOT-23

Datasheet:ZXMN10A07FTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	700mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	800mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Voltage	100V
Power Dissipation-Max	625mW Ta
Element Configuration	Single
Current	8A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625mW
Turn On Delay Time	1.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	138pF @ 50V
Current - Continuous Drain (Id) @ 25°C	700mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 10V
Rise Time	1.5ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	1.5 ns
Turn-Off Delay Time	4.1 ns
Continuous Drain Current (ID)	800mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free