ZXMN2A01FTC

new-10%

Manufacturer part number:ZXMN2A01FTC

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 20V 1.9A SOT23-3

Case Package:SOT-23

Datasheet:ZXMN2A01FTC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	625mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	303pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.9A Ta
Gate Charge (Qg) (Max) @ Vgs	3nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Drain Current-Max (Abs) (ID)	1.9A
Drain-source On Resistance-Max	0.12Ohm
DS Breakdown Voltage-Min	20V
RoHS Status	ROHS3 Compliant