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ZXMN3A02X8TC

ZXMN3A02X8TC

ZXMN3A02X8TC

Diodes Incorporated

MOSFET N-CH 30V 5.3A 8MSOP

SOT-23

ZXMN3A02X8TC Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6.7A
[email protected] Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code S-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 26.8nC @ 10V
Rise Time 5.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 5.3A
JEDEC-95 Code MO-187AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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