ZXT1M322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXT1M322TA Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerSMD, Flat Leads
Number of Pins
322
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Max Power Dissipation
3W
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
Frequency
110MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXT1M322
Pin Count
5
JESD-30 Code
S-PDSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
110MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2.5A 2V
Current - Collector Cutoff (Max)
25nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 150mA, 4A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
110MHz
Collector Emitter Saturation Voltage
-240mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
-20V
Emitter Base Voltage (VEBO)
7.5V
Continuous Collector Current
-4A
Height
1mm
Length
2mm
Width
2mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
ZXT1M322TA Product Details
ZXT1M322TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2.5A 2V.A collector emitter saturation voltage of -240mV allows maximum design flexibility.When VCE saturation is 300mV @ 150mA, 4A, transistor means Ic has reached transistors maximum value (saturated).A -4A continuous collector voltage is necessary to achieve high efficiency.The emitter base voltage can be kept at 7.5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 110MHz in the part.As a result, it can handle voltages as low as 12V volts.Collector current can be as low as 4A volts at its maximum.
ZXT1M322TA Features
the DC current gain for this device is 180 @ 2.5A 2V a collector emitter saturation voltage of -240mV the vce saturation(Max) is 300mV @ 150mA, 4A the emitter base voltage is kept at 7.5V the current rating of this device is -4A a transition frequency of 110MHz
ZXT1M322TA Applications
There are a lot of Diodes Incorporated ZXT1M322TA applications of single BJT transistors.