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ZXT1M322TA

ZXT1M322TA

ZXT1M322TA

Diodes Incorporated

ZXT1M322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT1M322TA Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-PowerSMD, Flat Leads
Number of Pins 322
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 3W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXT1M322
Pin Count 5
JESD-30 Code S-PDSO-F3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2.5A 2V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 150mA, 4A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -240mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) -20V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -4A
Height 1mm
Length 2mm
Width 2mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
ZXT1M322TA Product Details

ZXT1M322TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2.5A 2V.A collector emitter saturation voltage of -240mV allows maximum design flexibility.When VCE saturation is 300mV @ 150mA, 4A, transistor means Ic has reached transistors maximum value (saturated).A -4A continuous collector voltage is necessary to achieve high efficiency.The emitter base voltage can be kept at 7.5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 110MHz in the part.As a result, it can handle voltages as low as 12V volts.Collector current can be as low as 4A volts at its maximum.

ZXT1M322TA Features


the DC current gain for this device is 180 @ 2.5A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 150mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 110MHz

ZXT1M322TA Applications


There are a lot of Diodes Incorporated ZXT1M322TA applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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